新增加的存儲器芯片IC型號

  • 存儲器型號
  • 品牌
  • 功能描述
  • WS512K32-55H1CA
  • White-Electronic 
  • 55ns; 5V power supply - 3.3V parts also available; 512K x 32 SRAM module, SMD 5962-94611 
  • KM416V1004AJ-L8
  • Samsung 
  • 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns 
  • EN29F002NT-55JI
  • Eon 
  • 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. 
  • M24C64-WMW6T
  • ST-Microelectronics 
  • 64K/32K SERIAL I 2 C BUS EEPROM 
  • MEM8129SI-15
  • Mosaic-Semiconductor 
  • 128K x 8-bit EEPROM, 150ns 
  • WS512K32L-25H1CA
  • White-Electronic 
  • 25ns; 5V power supply - 3.3V parts also available; 512K x 32 SRAM module, SMD 5962-94611 
  • WS512K32L-15G1UIA
  • White-Electronic 
  • 15ns; 5V power supply - 3.3V parts also available; 512K x 32 SRAM module, SMD 5962-94611 
  • 7206FRPES30
  • Maxwell 
  • High-speed epi-CMOS (16K x 9-bit) parallel FIFO 
  • 28C256APM-3
  • TRBIC 
  • High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM 
  • EDI88512C100CC
  • White-Electronic 
  • 100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS 
  • UT62W1024LC-70LL
  • Utron 
  • Access time 70 ns, 128 K x 8 Bit wide range low power CMOS SRAM 
  • WS512K32N-25G1UCA
  • White-Electronic 
  • 25ns; 5V power supply - 3.3V parts also available; 512K x 32 SRAM module, SMD 5962-94611 
  • N28F020-70
  • Intel 
  • 2048(256 x 8) CMOS flash memory. Access speed 70 ns 
  • WMS128K8L-85FEM
  • White-Electronic 
  • 85ns; 5V power supply; 128K x 8 CMOS monolithic SRAM, SMD 5962-96691